| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Hitachi Semiconductor |
2SC3659
|
38Kb / 1P |
HIGH VOLTAGE,HIGH POWER SWITCHING
|
 List of Unclassifed Man... |
FLC317MG-4
|
481Kb / 5P |
High Voltage - High Power GaAs FET
|
|
EGN21A090IV
|
236Kb / 4P |
High Voltage - High Power GaN-HEMT
|
|
EGN010MK
|
188Kb / 3P |
High Voltage - High Power GaN-HEMT
|
 Eudyna Devices Inc |
EGN21A045IV
|
231Kb / 4P |
High Voltage - High Power GaN-HEMT
|
|
EGN21A180IV
|
234Kb / 4P |
High Voltage - High Power GaN-HEMT
|
|
ESN26A180IV
|
106Kb / 4P |
High Voltage - High Power GaN-HEMT
|
|
ESN35A090IV
|
108Kb / 4P |
High Voltage - High Power GaN-HEMT
|
|
FLL21E010MK
|
308Kb / 6P |
High Voltage - High Power GaAs FET
|
 ON Semiconductor |
MJE4343G
|
138Kb / 8P |
High-Voltage - High Power Transistors
May, 2012 ??Rev. 5 |