ACE636B pdf, ACE636B Descripción Electrónicos, ACE636B Datasheet, ACE636B view ::: ALLDATASHEET :::

No. de pieza	ACE636B

Descripción Electrónicos	Common Drain Dual N-Channel Enhancement Mode Field Effect

Tamaño del archivo	505.26 Kbytes

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Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

Página de inicio	http://www.ace-ele.com

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Número de pieza similar - ACE636B

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
ACE Technology Co., LTD...	ACE632	1Mb / 11P	The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. VER 1.3
	ACE633	1Mb / 10P	60V Complementary Enhancement Mode Field Effect Transistor VER 1.2
	ACE634	1Mb / 9P	20V Complementary Enhancement Mode Field Effect Transistor VER 1.2
	ACE6344B	937Kb / 11P	N and P-Channel Enhancement Mode MOSFET VER 1.1

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Alpha Industries	AO8800	226Kb / 6P	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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	AO8816	111Kb / 4P	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
	AO8830	121Kb / 4P	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
	AON3812	123Kb / 4P	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
	AO8832	219Kb / 4P	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Guangdong Kexin Industr...	KO8822	138Kb / 2P	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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