NX8349TS pdf, NX8349TS Descripción Electrónicos, NX8349TS Datasheet, NX8349TS view ::: ALLDATASHEET :::

No. de pieza	NX8349TS

Descripción Electrónicos	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

Tamaño del archivo	333.49 Kbytes

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Fabricante Electrónico	CEL [California Eastern Labs]

Página de inicio	http://www.cel.com

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Número de pieza similar - NX8349TS

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	NX8349TS	234Kb / 11P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8349TS	246Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8349TS	705Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	NX8346TS	172Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8369TB	213Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8349TB	211Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8350TS	227Kb / 9P	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
California Eastern Labs	NX8369TB	214Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8350TS	276Kb / 8P	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
	NX6350EP	1,013Kb / 6P	LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
Renesas Technology Corp	NX8349YK	253Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8349TB	204Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8350TS	220Kb / 9P	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION