2SC5337-T1 pdf, 2SC5337-T1 Descripción Electrónicos, 2SC5337-T1 Datasheet, 2SC5337-T1 view ::: ALLDATASHEET :::

No. de pieza	2SC5337-T1

Descripción Electrónicos	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

Tamaño del archivo	877.51 Kbytes

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Fabricante Electrónico	CEL [California Eastern Labs]

Página de inicio	http://www.cel.com

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Número de pieza similar - 2SC5337-T1

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	2SC5337-T1	104Kb / 7P	NPN Silicon RF Transistor for High-Frequency
Renesas Technology Corp	2SC5337-T1-AZ	104Kb / 7P	NPN Silicon RF Transistor for High-Frequency

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5338	186Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	NE46234	163Kb / 7P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
California Eastern Labs	2SC5336	1Mb / 7P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5337	99Kb / 7P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC4703	181Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD
	2SC5338	186Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD