| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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F2SP-6-R Reseller |
| Reseller | No. de pieza | Fabricante Electrónico | Descripción Electrónicos | Price | Qty. BuyNow | |
![]() TME | DF2S5.6ASL,L3F(B | Toshiba America Electronic Components | DF2S5.6ASL,L3F(B |
| 5,498 | |
| 1591LF2SBK | Hammond Manufacturing | Enclosure: multipurpose; X: 56mm; Y: 85mm; Z: 40mm; 1591; ABS; black RoHS : Compliant |
| 59 | ||
| 1591MF2SGY | Hammond Manufacturing | Enclosure: multipurpose; X: 56mm; Y: 85mm; Z: 27mm; 1591; ABS; grey |
| 3 | ||
| 1591GF2SBK | Hammond Manufacturing | Enclosure: multipurpose; X: 94mm; Y: 121mm; Z: 35mm; 1591; ABS; black |
| 1 | ||
| 1591SF2SGY | Hammond Manufacturing | Enclosure: multipurpose; X: 82mm; Y: 110mm; Z: 45mm; 1591; ABS; grey |
| 1 | ||
| 0207D1F2S2WDS03 | FATH | Transport cart; 600x400x158mm; Work.surface dim: 570x370mm |
| 0 | ||
| 0207D1F2S2WDS02 | FATH | Transport cart; 600x400x158mm; Work.surface dim: 570x370mm |
| 0 | ||
| 1591HF2SBK | Hammond Manufacturing | Enclosure: multipurpose; X: 71mm; Y: 165mm; Z: 30mm; 1591; ABS; black RoHS : Compliant |
| 0 | ||
| 1591LF2SGY | Hammond Manufacturing | Enclosure: multipurpose; X: 56mm; Y: 85mm; Z: 40mm; 1591; ABS; grey |
| 0 | ||
| IPB013N06NF2SATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263 RoHS : Compliant |
| 0 | ||
| IPF013N04NF2SATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7 RoHS : Compliant |
| 0 | ||
| IPF017N08NF2SATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 80V; 259A; 250W; D2PAK-7 RoHS : Compliant |
| 0 | ||
| IPT012N08NF2SATMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| 1591MF2SBK | Hammond Manufacturing | Enclosure: multipurpose; X: 56mm; Y: 85mm; Z: 27mm; 1591; ABS; black RoHS : Compliant |
| 0 | ||
| 1591UF2SGY | Hammond Manufacturing | Enclosure: multipurpose; X: 120mm; Y: 120mm; Z: 60mm; 1591; ABS; grey |
| 0 | ||
![]() Braemac Americas-Symmetry | PCFL-180P-F2S | Nipron Co | 180W fanless ATX power supply |
| 1 | |
| BE890F2S110TMI1000 | Telit | BLE 4.2 FULL SENSORS / BLUEMOD+S42M/AI3ATH |
| 0 | ||
![]() Flip Electronics | NGTD8R65F2SWK | onsemi | Stock, Ship Today RoHS : Compliant |
| 17,557 | |
| NXH300B100H4Q2F2S1G | onsemi | Stock, Ship Today |
| 2,448 | ||
| CNY17F2SVM | onsemi | Stock, Ship Today RoHS : Compliant |
| 2,000 | ||
| CNY17F2SM | onsemi | Stock, Ship Today RoHS : Compliant |
| 995 | ||
| NXH400N100L4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant |
| 36 | ||
| NXH400N100H4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant | 36 | |||
| NXH450N65L4Q2F2S1G-01 | onsemi | Stock, Ship Today |
| 36 | ||
| NXH200B100H4F2SG | onsemi | Stock, Ship Today | 20 | |||
| NXH450B100H4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant |
| 12 | ||
![]() Vyrian | RJF2SA1B | Amphenol Corporation | Rectangular Connector Adapter, 8 Contacts(Side1), 8 Contacts(Side2), Female-Female RoHS : Compliant | 13,850 | ||
| NXH800A100L4Q2F2S2G | onsemi | Insulated Gate Bipolar Transistor, 309A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 12,917 | |||
| NXH400N100H4Q2F2SG-R | onsemi | Insulated Gate Bipolar Transistor, 409A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 12,207 | |||
| NXH160T120L2Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 181A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 12,156 | |||
| NGTD14T65F2SWK | onsemi | Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel RoHS : Compliant | 11,685 | |||
| NXH160T120L2Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor, 181A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,418 | |||
| NGTD23T120F2SWK | onsemi | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS : Compliant | 9,360 | |||
| NGTD20T120F2SWK | onsemi | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,295 | |||
| NXH200T120H3Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 256A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7,448 | |||
| NXH300B100H4Q2F2SG-R | onsemi | Insulated Gate Bipolar Transistor, 73A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 6,967 | |||
| NXH350N100H4Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 6,565 | |||
| NXH600B100H4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 5,533 | |||
| NGTD17R120F2SWK | onsemi | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon RoHS : Compliant | 4,993 | |||
| SNXH600B100H4Q2F2S1G-S | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 4,184 | |||
| NXH400N100L4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 3,215 |
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