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H4Q2F2SG-R Reseller |
| Reseller | No. de pieza | Fabricante Electrónico | Descripción Electrónicos | Price | Qty. BuyNow | |
![]() Newark | NXH300B100H4Q2F2SG-R | onsemi | Mass Market 250Kw 1500V Q2 3 Level Boost; |Onsemi NXH300B100H4Q2F2SG-R RoHS : Not Compliant |
| 0 | |
![]() Rochester Electronics | NXH300B100H4Q2F2SG-R | onsemi | IGBT MOD 1kV 73A 194W Tray RoHS : Compliant |
| 6,514 | |
| NXH400N100H4Q2F2SG-R | onsemi | IGBT MOD 1kV 409A 959W Tray RoHS : Compliant |
| 94 | ||
![]() Vyrian | NXH400N100H4Q2F2SG-R | onsemi | Insulated Gate Bipolar Transistor, 409A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 12,207 | ||
| NXH300B100H4Q2F2SG-R | onsemi | Insulated Gate Bipolar Transistor, 73A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 6,967 |
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