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TPW60R080CFD Datasheet(PDF) 1 Page - Wuxi Unigroup Microelectronics Company

No. de pieza TPW60R080CFD
Descripción Electrónicos  600V Super-Junction Power MOSFET
PDF  8 Pages
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Fabricante Electrónico  WUMC [Wuxi Unigroup Microelectronics Company]
Página de inicio  http://www.tsinghuaicwx.com/en/index.asp
Logo WUMC - Wuxi Unigroup Microelectronics Company

TPW60R080CFD Datasheet(HTML) 1 Page - Wuxi Unigroup Microelectronics Company

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TPV60R080CFD, TPW60R080CFD
V3.0
www.tsinghuaicwx.com
Wuxi Unigroup Microelectronics Company
FEATURES
 Very low FOM R
DS(on)×Qg
 100% avalanche tested
 RoHS compliant
 Fast Body Diode
APPLICATIONS
 Switch Mode Power Supply (SMPS)
 Uninterruptible Power Supply (UPS)
 Power Factor Correction (PFC)
Device Marking and Package Information
Device
Package
Marking
TPV60R080CFD
TO-3PN
60R080CFD
TPW60R080CFD
TO-247
60R080CFD
Absolute Maximum Ratings T
C = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage (V
GS = 0V)
V
DSS
600
V
Continuous Drain Current
I
D
47
A
Pulsed Drain Current
(note1)
I
DM
141
A
Gate-Source Voltage
V
GSS
±30
V
Single Pulse Avalanche Energy
(note2)
E
AS
1120
mJ
Avalanche Current
(note1)
I
AR
15
A
Repetitive Avalanche Energy
(note1)
E
AR
1.76
mJ
Power Dissipation (T
C = 25ºC)
P
D
390
W
Operating Junction and Storage Temperature Range
T
J, Tstg
-55~+150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
R
thJC
0.32
K/W
Thermal Resistance, Junction-to-Ambient
R
thJA
62
600V Super-Junction Power MOSFET
1


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