SSM3J02F datasheet(2/5 Pages) TOSHIBA

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SSM3J02F

2003-03-27

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0

±1

Drain-source breakdown voltage

V (BR) DSS

ID = -1 mA, VGS = 0

-30

Drain cut-off current

IDSS

VDS = -30 V, VGS = 0

-1

Gate threshold voltage

Vth

VDS = -3 V, ID = -0.1 mA

-0.6

-1.1

Forward transfer admittance

ïYfsï

VDS = -3 V, ID = -0.3 A

(Note)

0.6

ID = -0.3 A, VGS = -4 V

(Note)

0.4

0.5

Drain-source ON resistance

RDS (ON)

ID = -0.3 A, VGS = -2.5 V

(Note)

0.55

0.7

Input capacitance

Ciss

VDS = -10 V, VGS = 0, f = 1 MHz

150

Reverse transfer capacitance

Crss

VDS = -10 V, VGS = 0, f = 1 MHz

Output capacitance

Coss

VDS = -10 V, VGS = 0, f = 1 MHz

Turn-on time

ton

Switching time

Turn-off time

toff

VDD = -15 V, ID = -0.3 A,

VGS = 0~-2.5 V, RG = 4.7 W

Note: Pulse test

Switching Time Test Circuit

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for

this product. For normal switching operation, VGS (ON) requires higher voltage than Vth and VGS (off) requires

lower voltage than Vth.

(Relationship can be established as follows: VGS (off) < Vth < VGS (ON))

Please take this into consideration for using the device.

VGS recommended voltage of -2.5 V or higher to turn on this product.

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