ACE6602B datasheet(1/6 Pages) ACE

No. de pieza	ACE6602B

Descripción Electrónicos	N-Channel Super Trench Power MOSFET

PDF	6 Pages

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Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

Página de inicio	http://www.ace-ele.com

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ACE6602B

N-Channel Super Trench Power MOSFET

VER 1.1

1

Description

ACE6602B uses Super Trench technology that is uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and switching power losses are minimized due to an

extremely low combination of RDS(on) and Qg.This device is ideal for high-frequency switching and

synchronous rectification.

Features



VDS= 60V , ID=80A



RDS(ON)@ VGS = 10V , TYP= 3.5m

Ω



RDS(ON)@ VGS = 4.5V , TYP= 4

mΩ

Absolute Maximum Ratings@TA=25℃ unless otherwise noted

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25℃

ID

80

A

TA=100℃

58

Drain Current (Pulsed)*B

IDM

320

A

Power Dissipation

TA=25℃

PD

85

W

Operating temperature / Storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJAis measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Packaging Type

DFN5*6-EP

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ACE6602B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE6602B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

Número de pieza similar - ACE6602B

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