ACE16904B datasheet(1/7 Pages) ACE

No. de pieza	ACE16904B

Descripción Electrónicos	N-Channel Enhancement Mode Power MOSFET

PDF	7 Pages

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Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

Página de inicio	http://www.ace-ele.com

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ACE16904B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

ACE16904B uses advanced trench technology and desgin to provide excellent RDS(ON) with low gate

charge. It can be used in a wide variety of applications.

Features



VDS = 60V , ID = 50A



RDS(ON) @VGS = 10V , TYP9.8

mΩ



RDS(ON) @VGS = 4.5V , TYP12m

Ω

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25

OC

ID

50

A

TA=100

OC

31

Drain Current (Pulse)*B

IDM

200

A

Single Pulse Avalanche Energy2

EAS

61

mJ

Single Pulse Avalanche Current2

IAS

35

A

Power Dissipation

TA=25

OC

PD

96

W

Derate above 25°C

0.77

W/

OC

Operating and Storage Temperature Range

TJ,TSTG

-55 to 150

OC

A: The value of RθJAis measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Thermal Characteristics

Parameter

Symbol

Max

Unit

Maximum Junction-to-Ambient

RθJA

62

OC /W

Maximum Junction-to-Case

RθJC

1.3

OC /W

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ACE16904B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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