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PI3VT34X245B Datasheet(PDF) 2 Page - Pericom Semiconductor Corporation |
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PI3VT34X245B Datasheet(HTML) 2 Page - Pericom Semiconductor Corporation |
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2 / 4 page ![]() 2 PS8531 03/19/01 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 PI3VT34X245 32-Bit,2-Port,LowVoltage TranslatorBusSwitch Storage Temperature ........................................................65°C to +150°C Ambient Temperature with Power Applied ......................... 40°Cto+85°C Supply Voltage to Ground Potential .........................................0.5Vto+4.6V DC Input Voltage .................................................................. 0.5Vto+5.5V DC Output Current ............................................................................120mA Power Dissipation ................................................................................ 0.5W Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specifica- tion is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli- ability. Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) s r e t e m a r a Pn o it p i r c s e Ds n o it i d n o C t s e T ) 1 ( . n i M. p y T ) 2 ( . x a Ms ti n U V H I e g a tl o V H G I H t u p n Il e v e L H G I H ci g o L d e e t n a r a u G8 . 1V C C V 3 . 0 + V V L I e g a tl o V W O L t u p n Il e v e L W O L ci g o L d e e t n a r a u G5 . 0 8 . 0 I H I t n e rr u C H G I H t u p n IV C C V ,. x a M = N I V = C C 1 ± A µ I L I t n e rr u C W O L t u p n IV C C V ,. x a M = N I D N G =1 ± I H Z O t n e rr u C t u p t u O e c n a d e p m I h g i H0 ≤ B , A ≤ V C C 1 ± R N O e c n a t si s e R N O h c ti w S V C C V ,. n i M = N I I , V 0 . 0 = N O A m 8 =5 8 Ω V C C V ,. n i M = N I I , V 7 . 1 = N O A m 8 =0 12 2 V C C V , V 3 . 2 = N I I , V 0 . 0 = N O A m 8 =6 9 V C C V , V 3 . 2 = N I I , V 3 . 1 = N O A m 8 =5 20 3 VP e g a tl o V s s a P V N I V = C C I , V 3 . 3 = T U O A µ 5 =3 . 25 . 29 . 2 V V N I V = C C I , V 5 . 2 = T U O A µ 5 =8 . 1 DCElectricalCharacteristics (OverOperatingRange,TA=40°Cto+85°C,VCC=3.3V±10%) Function BEN A031 Disconnect H Hi-Z Connect L B031 TruthTable(1) Notes: 1. H = High Voltage Level L = Low Voltage Level Hi-Z = High Impedance e m a N n i PO / In o it p i r c s e D E B N I) W O L e v it c A ( t u p n I el b a n E s u B 1 3 A - 0 AO /IA s u B 1 3 B - 0 BO /IB s u B ProductPinDescription |
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