8

2

8548-7 Rev. K 8/17

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL SPECIFICATIONS

Storage Temperature Range...........-65°C to +150°C

Peak Output Current.............................................2A

Lead Temperature Range

Differential Input Voltage....................................±30V

(10 Seconds)...................................................300°C

Common mode Input Voltage............................±15V

Junction Temperature......................................150°C

Thermal Resistance.....................................6.0°C/W

Case Operating Temperature Range

Junction to Case (@ 125°C)

MSK106K/H RH..............................-55°C to +125°C

MSK106RH.......................................-40°C to +85°C

NOTES:

1

Unless otherwise specified, ±VCC = ±15V, CC = 3000pF.

2

Guaranteed by design but not tested.

3

Typical parameters are representative of actual device performance but are for reference only.

4

Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.

5

Military grade devices (K/H suffix) shall be 100% tested to subgroups 1, 2, 3 and 4.

Subgroup 1, 4

TA = +25°C

2, 5

TA = +125°C

3, 6

TA = -55°C

6

Reference DLA SMD 5962R11228 for electrical specifications for devices purchased as such.

7

Subgroup 5 and 6 testing available upon request.

8

Continuous operation at or above absolute maximum ratings may adversly effect the device performance and/or life cylcle.

9

Pre and post irradiation limits at 25°C, up to 100Krad TID, are identical unless otherwise specified.

Parameter

Test Conditions 9

Group A

Subgroup

MSK106K/H RH

MSK106 RH

Units

Min.

Typ.

Max.

Min.

Typ.

Max.

STATIC

Supply Voltage Range

2

-

±5

±15

±22

±5

±15

±22

V

Quiescent Current

1

-

±1.7

±3.5

-

±1.7

±4.0

mA

2,3

-

-

±7.5

-

-

-

mA

Power Consumption

2

1,2,3

-

75

225

-

75

225

mW

INPUT

Input Offset Voltage

1

-

±0.5

±3.0

-

±0.5

±5.0

mV

2, 3

-

±2.0

±5.0

-

-

-

mV

Input Bias Current

1

-

±100 ±500

-

±150 ±500

nA

Either Input

2, 3

-

±0.4

±2.0

-

-

-

µA

Input Offset Current

1

-

±2.0 ±100

-

±2.0 ±300

nA

2,3

-

-

±300

-

-

-

nA

Input Capacitance

3

F = DC

-

-

3

-

-

3

-

pF

Input Resistance

2

F = DC

-

0.3

1.0

-

0.3

1.0

-

MΩ

Common Mode Rejection Ratio

4

70

90

-

70

90

-

dB

5,6

70

90

-

-

-

-

dB

Power Supply Rejection Ratio

1

80

95

-

80

95

-

dB

2,3

80

-

-

-

-

-

dB

Input Noise Voltage

3

F = 10Hz to 10KHz

-

-

5

-

-

5

-

OUTPUT

Output Voltage Swing

4

±13.5 ±14

-

±13.0 ±14

-

V

5,6

±13.5 ±14

-

-

-

-

V

4

±11

±12

-

±10.5 ±12

-

V

Output Short Circuit Current

4

0.8

1.2

1.6

0.7

1.2

1.7

A

4

50

150

250

50

150

250

mA

Settling Time

3

0.1% 2V step

-

-

4

-

-

4

-

µS

TRANSFER CHARACTERISTICS

Slew Rate

4

1.2

1.4

-

1.0

1.4

-

V/µS

Post Radiation

4

1.1

-

-

1.1

-

-

V/µS

Open Loop Voltage Gain

4

100

105

-

100

105

-

dB

5,6

88

96

-

-

-

-

dB

Transition Times

1V to 2V P Rise and Fall

4

-

0.8

1.0

-

0.8

1.2

µS

Post Radiation

4

-

1.0

1.2

-

1.0

1.2

µS

Overshoot

0V to 1V P Small Signal

4

-

5

20

-

5

20

%