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PIP202-12M Datasheet(PDF) 6 Page - NXP Semiconductors |
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PIP202-12M Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 20 page ![]() Philips Semiconductors PIP202-12M DC to DC converter powertrain Product data Rev. 01 — 15 July 2002 6 of 20 9397 750 10031 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9. Thermal characteristics 10. Characteristics [1] If the input voltage remains between VIH and VIL (2.5 V typ) for longer than td(3-state), then both MOSFETs are turned off. Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-pcb) thermal resistance from junction to printed-circuit board - 4 5 K/W Rth(j-a) thermal resistance from junction to ambient device mounted on FR4 printed-circuit board; copper area around device 25 × 25 mm no thermal vias - 25 - K/W with thermal vias - 20 - K/W with thermal vias and forced air cooling; airflow = 0.8 ms-1 (150 LFM) - 15 - K/W Rth(j-c) thermal resistance from junction to case measured on upper surface of package. - 11 - K/W Table 5: Characteristics VDDC =12V; Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics VDDC control circuit supply voltage 25 °C ≤ Tj ≤ 150 °C 7 12 14 V VIH HIGH-level input voltage 25 °C ≤ Tj ≤ 150 °C [1] 2.55 2.8 3.05 V VIL LOW-level input voltage 25 °C ≤ Tj ≤ 150 °C [1] 1.95 2.1 2.25 V ILI input leakage current 0 V ≤ VI ≤ 5 V - 0.3 1.2 mA IDDC control circuit supply current fi = 0 Hz - 1.5 3 mA fi = 500 kHz; Figure 10 -45 60 mA Ptot total power dissipation VDDO =12V; IO(AV) =20A; fi = 500 kHz; VO = 1.6 V; Tpcb ≤ 120 °C; Figure 6 - 4.5 5.7 W Dynamic characteristics td(on)(IH-OH) turn-on delay time input HIGH to output HIGH VDDO =12V; IO(AV) =25A - 77 85 ns td(off)(IL-OL) turn-off delay time input LOW to output LOW -30 45 ns to(r) output rise time - 18 25 ns to(f) output fall time - 12 20 ns td(3-state) 3-state enable delay time 115 144 173 ns |
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