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IPU07N03LA Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPU07N03LA Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 9 page ![]() IPU07N03LA 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=15 A pulsed parameter: Tj(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 5 V 15 V 20 V 0 2 4 6 8 10 12 0 102030 Q gate [nC] 20 21 22 23 24 25 26 27 28 29 -60 -20 20 60 100 140 180 T j [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 150 °C 1 10 100 1 10 100 1000 t AV [µs] Rev. 1.1 page 7 2003-02-06 |
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