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HABCW68 Datasheet(PDF) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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HABCW68 Datasheet(HTML) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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2 / 4 page ![]() ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 4 HABCW68(PNP) GENERAL PURPOSE TRANSISTOR Typical Characteristics Transition frequency fT = f (IC) VCE = 5V 10 10 10 10 BCW 67/68 EHP00398 f mA MHz 01 23 5 T 3 10 10 2 1 10 5 5 5 C Ι Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 0 30 60 90 120 150 180 210 240 270 300 mW 360 Permissible pulse load Ptotmax / PtotDC = f (tp) 10 EHP00399 BCW 67/68 -6 0 10 5 D = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = D T t p T tot max tot P DC P p t Collector cutoff current ICBO = f (TA) VCB = VCEmax 10 0 50 100 150 BCW 67/68 EHP00400 T A 5 10 10 nA 10 Ι CB0 5 5 5 10 10 5 4 3 2 1 0 max typ ˚C Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 10 03 BCW 67/68 EHP00401 V BE sat 10 mA 10 10 10 3 2 1 0 -1 5 5 5 V 12 4 150 25 -50 C Ι ˚C ˚C ˚C Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 10 0 600 BCW 67/68 EHP00402 V CE sat 10 mA 10 10 10 3 2 1 0 -1 5 5 5 mV 200 400 800 150 25 -50 C Ι ˚C ˚C ˚C |
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