IXTY01N80 datasheet(1/2 Pages) IXYS

No. de pieza	IXTY01N80

Descripción Electrónicos	High Voltage MOSFET

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Fabricante Electrónico	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 25 µA

800

V

GS(th)

V

DS = VGS, ID = 25 µA2

4.5

V

I

GSS

V

GS

= ±20 V

DC, VDS = 0

±50

nA

I

DSS

V

DS

= 0.8 V

DSS

T

J = 25°C

10

µA

V

GS = 0 V

T

J = 125°C

200

µA

R

DS(on)

V

GS = 10 V, ID = ID25

50

Ω

Pulse test, t

≤ 300 ms, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

01N100

V

DSS

T

J

= 25°C to 150°C

800

V

DGR

T

J

= 25°C to 150°C; R

GS = 1 MΩ

800

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25°C; T

J = 25°C to 150°C

100

mA

I

DM

T

C

= 25°C, pulse width limited by max. T

J

400

mA

P

D

T

C

= 25°C

25

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 5 s

300

°C

Weight

0.8

g

Preliminary data sheet

High Voltage MOSFET

N-Channel, Enhancement Mode

TO-251 AA

D

S

G

G = Gate,

D = Drain,

S = Source,

TAB = Drain

D (TAB)

Features

l Internationalstandardpackages

JEDEC TO-251 AA, TO-252 AA

l Low R

DS (on) HDMOS

TM process

l Rugged polysilicon gate cell structure

l Fastswitchingtimes

Applications

l Levelshifting

l Triggers

l Solid state relays

l Current regulators

98841 (5/01)

TO-252 AA

G

S

V

DSS

= 800

V

I

D25

= 100mA

R

DS(on)

=

50

Ω

IXTU 01N80

IXTY 01N80

D (TAB)

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