EL7562 datasheet(2/9 Pages) RENESAS

2 / 9 page

EL7562

FN7295 Rev 1.00

Page 2 of 9

May 1, 2006

Absolute Maximum Ratings (TA = 25°C)

Supply Voltage between VIN or VDD and GND . . . . . . . . . . . . +6.5V

VLX Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VIN +0.3V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, VDD +0.3V

VHI Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, VLX +6V

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

Operating Ambient Temperature . . . . . . . . . . . . . . . . . 0°C to +70°C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +135°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests

are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA

DC Electrical Specifications

VDD = VIN = 5V, TA = TJ = 25°C, COSC = 270pF, unless otherwise specified.

PARAMETER

DESCRIPTION

CONDITIONS

MIN

TYP

MAX

UNIT

VREF

Reference Accuracy

1.24

1.26

1.28

VREFTC

Reference Temperature Coefficient

ppm/°C

VREFLOAD

Reference Load Regulation

0 < IREF < 50µA

-1

VRAMP

Oscillator Ramp Amplitude

1.15

IOSC_CHG

Oscillator Charge Current

0.1V < VOSC < 1.25V

200

µA

IOSC_DIS

Oscillator Discharge Current

0.1V < VOSC < 1.25V

IVDD+VDRV

VDD+VDRV Supply Current

VEN = 4V, FOSC = 120kHz

6.5

IVDD_OFF

VDD Standby Current

EN = 0

1.5

VDD_OFF

VDD for Shutdown

2.5

2.7

VDD_ON

VDD for Startup

2.6

TOT

Over-temperature Threshold

135

°C

THYS

Over-temperature Hysteresis

°C

ILEAK

Internal FET Leakage Current

EN = 0, LX = 5V (low FET), LX = 0V (high

FET)

µA

ILMAX

Peak Current Limit

RDSON

FET On Resistance

Wafer level test only

120



RDSONTC

RDSON Tempco

0.2

/°C

VFB

Output Initial Accuracy

ILOAD = 0A

0.970

0.985

1.000

VFB_LINE

Output Line Regulation

VIN = 5V, VIN = 10%, ILOAD = 0A

0.5

VFB_LOAD

Output Load Regulation

0.1A < ILOAD < 1A

0.5

VFB_TC

Output Temperature Stability

-40°C < TA < 85°C, ILOAD = 0.5A

±1

IFB

Feedback Input Pull Up Current

VFB = 0V

100

200

VEN_HI

EN Input High Level

(Note)

VEN_LO

EN Input Low Level

IEN

Enable Pull Up Current

VEN = 0

-4

-2.5

µA

NOTE: VEN_HI is typically 2/3 of VDD. For VDD = 3.3V, VEN_HI is 2.2V typical.

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