ISL9014IRBCZ datasheet(4/11 Pages) RENESAS

No. de pieza	ISL9014IRBCZ

Descripción Electrónicos	Dual LDO with Low Noise, Low IQ and High PSRR

PDF	11 Pages

Scroll/Zoom	100%

Fabricante Electrónico	RENESAS [Renesas Technology Corp]

Página de inicio	http://www.renesas.com

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4 / 11 page

ISL9014

FN9245 Rev 3.00

Page 4 of 11

March 11, 2008

Output Noise Voltage

IO = 100µA, VO = 1.5V, TA = +25°C, CBYP = 0.1µF

BW = 10Hz to 100kHz

µVRMS

DEVICE START-UP CHARACTERISTICS

Device Enable Time

tEN

Time from assertion of the ENx pin to when the output voltage

reaches 95% of the VO(nom)

250

500

µs

LDO Soft-Start Ramp Rate

tSSR

Slope of linear portion of LDO output voltage ramp during

start-up

µs/V

EN1, EN2 PIN CHARACTERISTICS

Input Low Voltage

VIL

-0.3

0.5

Input High Voltage

VIH

1.4

VIN + 0.3

Input Leakage Current

IIL, IIH

0.1

µA

Pin Capacitance

CPIN

Informative

NOTES:

6. VOx = 0.98*VOx(NOM); Valid for VOx greater than 1.85V.

7. Parts are 100% tested at +25°C. Temperature limits established by characterization and are not production tested.

Electrical Specifications

Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature

range of the device as follows:

TA = -40°C to +85°C; VIN = (VO + 1.0V) to 6.5V with a minimum VIN of 2.3V; CIN = 1µF; CO = 1µF;

CBYP = 0.01µF. (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 7) TYP

MAX

(Note 7) UNITS

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