US1KSAFS datasheet(2/5 Pages) DIODES

2 / 5 page

US1KSAFS

Document number: DS38879 Rev. 2 - 2

2 of 5

www.diodes.com

September 2016

US1KSAFS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage (Note 5)

VRRM

VRWM

800

RMS Reverse Voltage

VR(RMS)

560

Average Rectified Output Current

@TA = +40°C

1.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

Maximum Full Load Reverse Current, Full Cycle Average,

0.375”(9.5mm) Length at TA = +55°C

IR(AV)

100

μA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Case (Note 8)

RJC

°C/W

Typical Thermal Resistance, Junction to Ambient (Note 8)

RJA

150

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Reverse Breakdown Voltage (Note 5)

@IR = 5μA

V(BR)R

800

Maximum Forward Voltage Drop

@IF = 1.0A

1.85

Peak Reverse Current

@TA = +25°C

at Rated DC Blocking Voltage (Note 5)

@TA = +100°C

5.0

μA

Maximum Reverse Recovery Time (Note 6)

tRR

Typical Total Capacitance (Note 7)

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 7.

7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

8. Device mounted on FR-4 substrate, 1"x1", 2oz, single-sided, PC boards with 0.1"x0.15" copper pad.

9. Device mounted on FR-4 substrate, 0.4"x0.5", 2oz, single-sided, PC boards with 0.2"x0.25" copper pad.

US1KSAFS Datasheet(PDF) 2 Page - Diodes Incorporated

US1KSAFS Datasheet(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5

Datasheet Descarga

Enlace URL