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SSM2212RZ-R7 Datasheet(PDF) 5 Page - Analog Devices

No. de pieza SSM2212RZ-R7
Descripción Electrónicos  Audio, Dual-Matched NPN Transistor
PDF  12 Pages
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Fabricante Electrónico  AD [Analog Devices]
Página de inicio  http://www.analog.com
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SSM2212RZ-R7 Datasheet(HTML) 5 Page - Analog Devices

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Data Sheet
SSM2212
Rev. C | Page 5 of 12
ABSOLUTE MAXIMUM RATING
Table 3.
Parameter
Rating
Breakdown Voltage of
Collector-to-Base Voltage (BVCBO)
40 V
Breakdown Voltage of
Collector-to-Emitter Voltage (BVCEO)
40 V
Breakdown Voltage of
Collector-to-Collector Voltage (BVCC)
40 V
Breakdown Voltage of
Emitter-to-Emitter Voltage (BVEE)
40 V
Collector Current (IC)
20 mA
Emitter Current (IE)
20 mA
Storage Temperature Range
−65°C to +150°C
Operating Temperature Range
−40°C to +85°C
Junction Temperature Range
−65°C to +150°C
Lead Temperature (Soldering, 60 sec)
300°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
θJA
θJC
Unit
8-Lead SOIC (R-8)
120
45
°C/W
16-Lead LFCSP (CP-16-22)
75
4.4
°C/W
ESD CAUTION



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