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AFIC901N Datasheet(PDF) 6 Page - NXP Semiconductors

No. de pieza AFIC901N
Descripción Electrónicos  RF LDMOS Wideband Integrated Power Amplifier
PDF  20 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFIC901N Datasheet(HTML) 6 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
AFIC901N
TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT
175
135
Gps
FREQUENCY (MHz)
Figure 4. Power Gain, Drain Efficiency and Output Power
versus Frequency at a Constant Input Power
160
155
150
145
140
28
D
33
32
27
34
31
30
165
170
32
28
29
26
30
31
29
60
80
70
50
40
35
Pout
VDD =7.5 V, Pin =0 dBm, IDQ1 =10 mA, IDQ2 =30 mA
2
1.5
1.5
VGS2, GATE--SOURCE VOLTAGE (VOLTS)
Figure 5. Output Power versus Gate--Source Voltage, 2nd Stage
4.0
3.5
3.0
2.5
2.0
0.5
2.5
1
0
VDD =7.5 V, IDQ1 =10mA,f=155 MHz
Pin =0 dBm
Pin =–3 dBm
1.5
VGS2, GATE--SOURCE VOLTAGE (VOLTS)
Detail A
2.5
2.0
0.25
0.5
0
VDD =7.5 V, IDQ1 =10mA,f=155 MHz
Detail A
Pin =–3 dBm
Pin =0 dBm
D
Pin, INPUT POWER (dBm)
26
36
–8
20
50
–6
33
31
30
20
32
30
32
29
27
–4
35
40
–2
4
34
30
28
02
28
26
24
22
VDD =7.5 Vdc, lDQ1 =10 mA, lDQ2 =30 mA
Figure 6. Power Gain, Drain Efficiency and Output Power
versus Input Power and Frequency
23
25
24
60
70
80
Gps
Pout
175 MHz
135 MHz
155 MHz 175 MHz
135 MHz
175 MHz
135 MHz
155 MHz
155 MHz



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