4

TMP235, TMP236

SBOS857D – SEPTEMBER 2017 – REVISED AUGUST 2018

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Copyright © 2017–2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings

only, which do not imply functional operation of the device at these or anyother conditions beyond those indicated under Recommended

OperatingConditions. Exposure to absolute-maximum-rated conditions for extended periods mayaffect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

+6

V

–0.3

Output current

–30

+30

mA

Latch-up current, each pin

–200

+200

+150

°C

–65

+150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±4000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101

(2)

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Input voltage (TMP235)

2.3

5.5

V

Input voltage (TMP236)

3.1

5.5

Operating free-air temperature

–50

150

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

For information on self-heating and thermal response time see Layout Guidelines section.

(3)

board as specified in JESD51-7, in an environment described in JESD51-2. Exposed pad packages assume that thermal vias are

included in the PCB, per JESD 51-5.

(4)

Changes in output due to self heating can be computed by multiplying the internal dissipation by the thermal resistance.

6.4 Thermal Information

TMP235

UNIT

DCK (SC70)

DBZ (SOT-23)

PINS

PINS

275

167

°C/W

Junction-to-case (top) thermal resistance

84

90

°C/W

Junction-to-board thermal resistance

56

146

°C/W

Junction-to-top characterization parameter

1.2

35

°C/W

Junction-to-board characterization parameter

55

146

°C/W