MDF4N65B datasheet(2/6 Pages) MGCHIP

2 / 6 page

Jul. 2012 Version 1.2

MagnaChip Semiconductor Ltd

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDF4N65BTH

-55~150

TO-220F

Tube

Halogen Free

Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

650

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

2.0

4.0

Drain Cut-Off Current

IDSS

VDS = 650V, VGS = 0V

µA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

100

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 2.0A

1.8

2.2

Forward Transconductance

gfs

VDS = 30V, ID = 2.0A

3.11

Dynamic Characteristics

Total Gate Charge

VDS = 520V, ID = 4.0A, VGS = 10V

(3)

11.6

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

4.6

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

518

Reverse Transfer Capacitance

Crss

Output Capacitance

Coss

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 325V, ID = 4.0A,

RG = 25

(3)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to

Source Diode Forward Current

Source-Drain Diode Forward Voltage

VSD

IS = 4.0A, VGS = 0V

1.4

Body Diode Reverse Recovery Time

trr

IF = 4.0A, dl/dt = 100A/µs

(3)

245

Body Diode Reverse Recovery Charge

Qrr

1.5

µC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

ISD ≤4.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25 , Starting TJ=25°C

4. L=19.6mH,

IAS=4.0A, VDD=50V, Rg =25 , Starting TJ=25°C,

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