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TIPL760C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TIPL760C Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor TIPL760C FEATURES · Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min.) · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · Rugged Triple-duffused planar construction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 4 A ICM Peak collector current 8 A PC Collector Power Dissipation @TC=25℃ 75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Número de pieza similar - TIPL760C |
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Descripción similar - TIPL760C |
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