MHT2012N

1

RF Device Data

NXP Semiconductors

RF LDMOS Integrated Power

Amplifier

This 12.5 W CW RF power integrated circuit is designed for RF energy

applications operating in the 2450 MHz ISM band.

Frequency

(MHz)

Signal

Type

(dB)

PAE

(%)

(W)

2400

CW

30.1

51.3

13.0

2450

30.0

51.4

12.7

2500

29.7

50.5

11.7

Features

 High gain simplifies layout and reduced PCB area compared to a

discrete design

 On--chip input and interstage matching (50 ohm input)

 Integrated quiescent current temperature compensation with

 Integrated ESD protection

 150C case and junction temperature rating

 Ideal as a driver for high power RF energy applications

Typical Applications

 Driver for consumer and commercial cooking applications

 Driver for industrial heating applications, such as sterilization,

pasteurization, drying, moisture--leveling process, curing and welding

 Driver for medical applications, such as microwave ablation,

renal denervation and diathermy

 Final stage for portable heating devices and portable medical systems

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistor.

Quiescent Current

1

2

3

4

5

6 78 9 10 11 12

18

17

16

15

14

13

24 23 22 21 20 19

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control

Document Number: MHT2012N

Rev. 0, 07/2018

NXP Semiconductors

Technical Data

2400–2500 MHz, 12.5 W CW, 28 V

RF LDMOS INTEGRATED

POWER AMPLIFIER

MHT2012N

PQFN 8  8

PLASTIC

 2018 NXP B.V.