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IRFP260NPBF Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza IRFP260NPBF
Descripción Electrónicos  Isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFP260NPBF Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
Isc N-Channel MOSFET Transistor
IRFP260NPBF
·
FEATURES
·
With TO-247 packaging
·
Ease of paralleling
·
High speed switching
·
Hard switched and high frequency circuits
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Switching applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous@TC=25℃
TC=100℃
50
35
A
IDM
Drain Current-Single Pulsed
200
A
PD
Total Dissipation
@TC=25℃
TC=100℃
300
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.5
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
40
℃
/W


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