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APT80GP60B2 Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT80GP60B2 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page  APT80GP60B2 600V MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com STATIC ELECTRICAL CHARACTERISTICS The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 45A • Low Gate Charge • 100 kHz operation @ 400V, 72A • Ultrafast Tail Current shutoff • SSOA rated POWER MOS 7 ® IGBT MIN TYP MAX 600 3 4.5 6 2.2 2.7 2.1 1.0 5 ±100 Symbol BVCES VGE(TH) VCE(ON) ICES IGES UNIT Volts mA nA Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL APT80GP60B2 600 ±20 ±30 100 100 330 330A @ 600V 1041 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 @ T C = 25°C Continuous Collector Current 7 @ T C = 110°C Pulsed Collector Current 1 @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA) Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 80A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 80A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) T-Max TM G C E G C E |
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