AM652X datasheet(145/299 Pages) TI1

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VDDS_OSC1

OSC1_XO

Time

VSS

VDDS_OSC1 (min.)

VDD_CORE (min.)

VSS

VDD_CORE

145

AM6548, AM6528, AM6546

AM6526, AM6527

www.ti.com

SPRSP08E – NOVEMBER 2017 – REVISED OCTOBER 2018

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Product Folder Links: AM6548 AM6528 AM6546 AM6526 AM6527

Specifications

Table 5-20. OSC1 Crystal Electrical Characteristics (continued)

NAME

DESCRIPTION

MIN

TYP

MAX

UNIT

Crystal shunt capacitance

ESR = 30 Ω

ESR = 40 Ω

19.2 MHz, 20 MHz, 24

MHz, 25 MHz, 26 MHz, 27

MHz

ESR = 50 Ω

19.2 MHz, 20 MHz

24 MHz, 25 MHz, 26 MHz,

27 MHz

ESR = 60 Ω

19.2 MHz, 20 MHz

24 MHz, 25 MHz, 26 MHz,

27 MHz

Not Supported

ESR = 80 Ω

19.2 MHz, 20 MHz

24 MHz, 25 MHz, 26 MHz,

27 MHz

Not Supported

ESR = 100 Ω

19.2 MHz, 20 MHz

24 MHz, 25 MHz, 26 MHz,

27 MHz

Not Supported

Crystal motional inductance for fp = 20 MHz

10.16

Crystal motional capacitance

3.42

fj(OSC1_XI)

Frequency accuracy, OSC1_XI

Ethernet RGMII and RMII

not used

±100

ppm

Ethernet RGMII and RMII

using derived clock

±50

When selecting a crystal, the system design must consider the temperature and aging characteristics of a

based on the worst case environment and expected life expectancy of the system.

Table 5-21 details the switching characteristics of the oscillator and the requirements of the input clock.

Table 5-21. OSC1 Switching Characteristics – Crystal Mode

NAME

DESCRIPTION

MIN

TYP

MAX

UNIT

Oscillation frequency

19.2, 20, 24, 25, 26, 27

MHz

tsX

Start-up time

2(1)

(1) In order to meet the start-up time defined in this table, the crystal needs to be selected according to the following equation:

Tsu = K*Lm/ (Ro-ESR) + Δt

where Lm is crystal motional inductance, RO is the negative resistance of amplifier, ESR is the crystal Effective series resistance and K

is a constant which represents the initial conditions. Δt is the time amplifier takes to reach its bias point after power down is released.

Figure 5-17. OSC1 Start-up Time

AM652X Datasheet(PDF) 145 Page - Texas Instruments

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