2002 Jun 26

2

Philips Semiconductors

Product specification

PNP general purpose transistor

2PB709AW

FEATURES

• High collector current (max. 100 mA)

• Low collector-emitter saturation voltage (max. 500 mV).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor in an SC-70 (SOT323) plastic package.

NPN complement: 2PD601AW

MARKING

Note

1. * = p: made in Hong Kong.

* = t: made in Malaysia.

PINNING

TYPE NUMBER

2PB709AQW

N5*

2PB709ARW

N7*

2PB709ASW

N9*

PIN

DESCRIPTION

1

base

2

emitter

3

collector

handbook, halfpage

MAM048

Top view

2

1

3

2

3

1

Fig.1

Simplified outline SC-70 (SOT323)

and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. For mounting conditions, see

“Thermal considerations and footprint design for SOT323 in the General Part of Data

Handbook SC18”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−45

V

collector-emitter voltage

open base

−−45

V

emitter-base voltage

open collector

−−6V

collector current (DC)

−−100

mA

peak collector current

−−200

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C