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IRFE310 Datasheet(PDF) 1 Page - International Rectifier |
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IRFE310 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 7 page ![]() 10/9/98 www.irf.com 1 Absolute Maximum Ratings Parameter IRFE310, JANTX-, JANTXV-, 2N6786U Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 1.25 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 0.80 IDM Pulsed Drain Current 5.5 PD @ TC = 25°C Max. Power Dissipation 15 W Linear Derating Factor 0.12 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 34 mJ dv/dt Peak Diode Recovery dv/dt 2.8 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Surface Temperature 300 ( for 5 seconds) Weight 0.42 (typical) g N-CHANNEL PD - 91782 400Volt, 3.6 Ω Ω Ω Ω Ω, HEXFET The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. HEXFET transistors also feature all of the well-es- tablished advantages of MOSFETs, such as volt- age control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required. oC A IRFE310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786U HEXFET® TRANSISTOR JANTXV2N6786U [REF:MIL-PRF-19500/556] Product Summary Part Number BVDSS RDS(on) ID IRFE310 400V 3.6 Ω 1.25A Features: n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n Small footprint n Surface Mount n Lightweight |
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