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TSM048NB06LCR Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM048NB06LCR Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM048NB06LCR Taiwan Semiconductor 1 Version: B1804 N-Channel Power MOSFET 60V, 107A, 4.8m Ω FEATURES ● Low R DS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and R g tested. ● 175°C Operating Junction Temperature ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● DC-DC converter ● Secondary Synchronous Rectification KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 4.8 m Ω VGS = 4.5V 6.8 Qg 52 nC PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) TC = 25°C ID 107 A TA = 25°C 16 Pulsed Drain Current IDM 428 A Single Pulse Avalanche Current (Note 2) IAS 35 A Single Pulse Avalanche Energy (Note 2) EAS 184 mJ Total Power Dissipation TC = 25°C PD 136 W TC = 125°C 45 Total Power Dissipation TA = 25°C PD 3.1 W TA = 125°C 1 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +175 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.1 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in 2 pad of 2 oz copper. |
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