ISCNH20 datasheet(1/1 Pages) ISC

No. de pieza	ISCNH20

Descripción Electrónicos	isc N-Channel MOSFET Transistor Die

PDF	1 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

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isc N-Channel MOSFET Transistor Die

ISCNH20

DESCRIPTION

·Low On-Resistance

·Fast switching

·Minimum Lot-to-Lot variations for robust device performance and reliable operation

CHARACTERISTICS

Die Size

6704*6400

um2

Scribe Line Size

60

um

Wafer Diameter

6

inches

Thickness

250±20

um

Metal

Front

AlSiCu: 4um

Back

Ti/Ni//Ag:1.1um

Bond Area

Gate

320um*460um

Source

4800um*1506um*2

4800um*1500um

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID= 250uA

500

V

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID= 250uA

3

4

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 14A

140

180

mΩ

IGSS

Gate-Source Leakage Current

VGS= ±30V; VDS= 0V

±100

nA

IDSS

Drain-Source Leakage Current

VDS= 500V; VGS= 0V

1

uA

VSD

Diode forward Voltage

IS= 14A, VGS = 0V

1.4

V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55~150

℃

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ISCNH20 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

ISCNH20 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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