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OVLJRGD8 Datasheet(PDF) 2 Page - TT Electronics. |
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OVLJRGD8 Datasheet(HTML) 2 Page - TT Electronics. |
2 / 4 page ![]() Issue 1.0 0505 Page 2 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 visibleLED@optekinc.com www.optekinc.com Oval Red LED Lamp (4mm) OVLJRGD8 Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature Range -40 ~ +100 °C Operating Temperature Range -40 ~ +95 °C Reverse Voltage 5 V Continuous Forward Current1 50 mA Peak Forward Current (10% Duty Cycle, 1KHz) 200 mA Power Dissipation 125 mW 260°C Lead Soldering Temperature (3mm from the base of the epoxy bulb)2 Notes: 1. For long term performance the drive currents between 10mA and 30mA are recommended. Please contact an Optek sales representative for more information on recommended drive conditions. 2. Solder time less than 3 seconds at temperature extreme. Electrical Characteristics TA = 25o C unless otherwise noted SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS Iv Luminous Intensity 280 400 ---- mcd IF = 20mA VF Forward Voltage ---- 2.0 2.5 V IF = 20mA IR Reverse Current ---- ---- 100 µA VR = 5V D Dominant Wavelength 620 624 628 nm IF = 20mA 2 ½H-H 50% Power Angle ---- 100 ---- deg IF = 20mA 2 ½V-V ---- 50 ---- deg IF = 20mA Standard Bins (IF = 20mA) Lamps are sorted to luminous intensity (IV) and dominant wavelength ( D) bins shown. Orders for OVLJRGD8 may be filled with any or all bins contained as below. Important Notes: 1. All ranks will be included per delivery, rank ratio will be based on the chip distribution. 2. To designate luminous intensity ranks, please contact OPTEK. 3. Pb content <1000PPM. 550 390 Q 280 P Luminous intensity is at P bin or above. 620 628 Dominant Wavelength (nm) |
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