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PJ2N9012
PNP Epitaxial Silicon Transistor
1-3
2002/01.rev.A
1W OUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLASS B PUSH-PULL OPERATION
• High total power dissipation(PT=625mW)
•
High collector Current (Ic=-500mA)
• Complementary to 2N9013
•
Excellent hEF Linearity
Rating
Symbol
Value
Uint
Collector Base Voltage
VCBO
-40
V
Collector Emitter Voltage
VCEO
-20
V
Emitter Base Voltage
VEBO
-5
V
Collector Current
Ic
-500
A
Collector Dissipation
Pc
625
W
Junction Temperature
Tj
150
0C
Storage Temperature
Tstg
-55 ~150
0C
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(ON)
IC= -100μA , IE=0
IC= -1mA , IB=0
IE=-100μA , IC=0
VCB= -25V , IE = 0
VEB= -3V , IC=0
VEB= -1V, IC =-50mA
VEB= -1V, IC =-500mA
IC= -500 mA , IB=-50mA
IC= -500mA , IB=-50mA
VCE =-1V, Ic =-10mA
-40
-20
-5
64
40
0.58
120
90
0.14
0.84
0.63
-100
-100
202
0.3
1.0
0.7
V
V
V
nA
nA
V
V
V
Device
Operating Temperature
Package
PJ2N9012CT
TO-92
PJ2N9012CX
-20℃～+85℃
SOT-23
Classification
D
E
F
G
H
hEF
64-91
78-112
96-135
112-166
144-202
ABSOLUTE MAXIMUM RATINGS (Ta= 25℃
℃
℃
℃
)
ELECTRICAL CHARACTERISTICS
(Ta= 25 0C)
hEF CLASSIFICATION
TO-92
SOT-23
ORDERING INFORMATION
Pin : 1.Emitter
2.Base
3.Collector
Pin : 1. Base
2. Emitter
3. Collector
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