D-PHEMT

SAV-331+

Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Page 3 of 5

Notes:

(1) Operation of this device above any one of these parameters may cause permanent damage.

(2) Assumes DC quiescent conditions, Vgs = -0.51 V, Vds = 4 V.

Symbol

Parameter

Max.

Units

V

DS

5

V

V

GS

-5

V

V

GD

-5

V

I

DS

149

mA

P

DISS

Total Dissipated Power

400

mW

P

IN

RF Input Power

20

dBm

T

CH

Channel Temperature

150

°C

T

OP

Operating Temperature

-40 to 85

°C

T

STD

Storage Temperature

-65 to 150

°C

Electrical Specifications at T

SAV-331+

D-PHEMT

Electrical Specifications at T

Page 2 of 4

Symbol

Parameter

Condition

Min.

Typ.

Max.

Units

DC Specifications

V

GS

Operational Gate Voltage

V

-0.81

-0.69

-0.57

V

V

p

Pinch-off Voltage

V

-0.81

V

I

DSS

Saturated Drain Current

V

228

mA

G

M

Transconductance

V

282

mS

Gate to Drain Leakage Current

1000

I

GSS

Gate leakage Current

V

600

Specifications, Z

NF

Noise Figure

V

f=40 MHz

0.9

dB

f=300 MHz

0.5

f=900 MHz

0.4

f=2000 MHz

0.5

0.8

f=4000 MHz

0.9

Gain

Gain

V

f=10 MHz

24.6

dB

f=300 MHz

24.1

f=900 MHz

21.3

f=2000 MHz

13.9

16.6

18.3

f=4000 MHz

11.5

OIP3

Output IP3

V

f=10 MHz

30.9

dBm

f=300 MHz

32.3

f=900 MHz

33.5

f=2000 MHz

35.5

f=4000 MHz

38.7

P1dB

Power output at 1

dB Compression

V

f=10 MHz

19.1

dBm

f=300 MHz

19.6

f=900 MHz

18.0

20.2

f=2000 MHz

18.9

21.1

f=4000 MHz

21.8

Thermal Resistance

109

°C/W

V

I

GDO