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2SC4552 Datasheet(PDF) 2 Page - NEC

No. de pieza 2SC4552
Descripción Electrónicos  NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF  6 Pages
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Fabricante Electrónico  NEC [NEC]
Página de inicio  http://www.nec.com/
Logo NEC - NEC

2SC4552 Datasheet(HTML) 2 Page - NEC

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Data Sheet D15598EJ2V0DS
2
2SC4552
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 8.0 A, IB = 0.8 A, L = 1 mH
60
V
Collector to emitter voltage
VCEX(SUS)
IC = 8.0 A, IB1 =
−IB2 = 0.8 A,
VBE(OFF) =
−1.5 V, L = 180
µH, clamped
60
V
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
10
µA
Collector cutoff current
ICER
VCE = 60 V, RBE = 50
Ω, Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 60 V, VBE(OFF) =
−1.5 V
10
µA
Collector cutoff current
ICEX2
VCE = 60 V, VBE(OFF) =
−1.5 V,
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
µA
DC current gain
hFE1*VCE = 2.0 V, IC = 1.5 A
100
DC current gain
hFE2*VCE = 2.0 V, IC = 3.0 A
100
400
DC current gain
hFE3*VCE = 2.0 V, IC = 8.0 A
60
Collector saturation voltage
VCE(sat)1*IC = 8.0 A, IB = 0.4 A
0.3
V
Collector saturation voltage
VCE(sat)2*IC = 12 A, IB = 0.6 A
0.5
V
Base saturation voltage
VBE(sat)1*IC = 8.0 A, IB = 0.4 A
1.2
V
Base saturation voltage
VBE(sat)2*IC = 12 A, IB = 0.6 A
1.5
V
Collector capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
180
pF
Gain bandwidth product
fT
VCE = 10 V, IC = 1.5 A
120
MHz
Turn-on time
ton
0.3
µs
Storage time
tstg
1.5
µs
Fall time
tf
IC = 8.0 A, RL = 6.3
Ω,
IB1 =
−IB2 = 0.4 A, VCC ≅ 50 V
Refer to the test circuit.
0.3
µs
* Pulse test PW
≤ 350
µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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