P1065ETFS datasheet(2/4 Pages) NIKOSEM

No. de pieza	P1065ETFS

Descripción Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Fabricante Electrónico	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Página de inicio	http://www.niko-sem.com

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2 / 4 page

G-16-2

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

REV 1.0

P1065ETF:TO-220F

P1065ETFS:TO-220FS

Halogen-Free & Lead-Free

Gate Voltage Drain Current

IDSS

VDS = 650V, VGS = 0V , TC = 25 °C

A

VDS = 520V, VGS = 0V , TC = 100 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 10V, ID = 5A

0.55

0.77

Forward Transconductance

gfs

VDS = 10V, ID = 5A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

2017

Output Capacitance

Coss

167

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDD = 520V, ID =10A, VGS = 10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

8.5

Turn-On Delay Time

td(on)

VDD = 325V, ID =10A, RG= 25Ω

Rise Time

Turn-Off Delay Time

td(off)

136

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF =10A, VGS = 0V

Reverse Recovery Time

trr

IF =10A, dlF/dt = 100A / S

451

Reverse Recovery Charge

Qrr

5.8

1Pulse test : Pulse Width

 380 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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