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ADM1266ACPZ-R7 Datasheet(PDF) 27 Page - Analog Devices |
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ADM1266ACPZ-R7 Datasheet(HTML) 27 Page - Analog Devices |
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27 / 62 page ![]() Data Sheet ADM1266 Rev. A | Page 27 of 62 Nondestructive operation above TJ = 85°C is possible. However, the electrical specifications are not guaranteed and, in this case, the EEPROM degrades. Operating the EEPROM above TJ = 85°C may result in a degradation of retention characteristics. The fault logging function, which is useful in debugging system problems that may occur at high temperatures, only writes to fault log EEPROM locations. If occasional writes to these registers occur above TJ = 85°C, a slight degradation in the data retention characteristics of the fault log may occur. It is recommended that the EEPROM not be written using STORE_USER_ALL or bulk programming when TJ > 85°C. The degradation in EEPROM retention for temperatures TJ > 85°C can be approximated by calculating the dimensionless acceleration factor using the following equation: 11 273 273 USE STRESS Ea kT T AF e ×− ++ = where: AF is the acceleration factor. Ea, the activation energy, = 0.6 eV. k = 8.617 × 10−5 eV/°K. TUSE = 85°C, the specified junction temperature. TSTRESS is the actual junction temperature. For example, calculate the effect on retention when operating at a junction temperature of 125°C for 10 hours. TSTRESS = 125°C AF = 7.062 The equivalent operating time at 85°C = 70.62 hours. Therefore, the overall retention of the EEPROM degrades by 60.62 hours as a result of operation at a junction temperature of 125°C for 10 hours. The effect of this overstress is negligible when compared to the overall EEPROM retention rating of 87,600 hours at a maximum junction temperature of 85°C. |
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