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ISCNH53P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCNH53P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor ISCNH53P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 60 V VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA 2 4 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=30A 9 11 mΩ IGSS Gate-Source Leakage Current VGS=±20V ±100 nA IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V 1 μ A Ciss Input Capacitance VDS=25V; VGS= 0V, f=1MHZ 2300 pF Coss Output Capacitance 230 pF Crss Reverse Transfer Capacitance 205 pF VSD Diode forward voltage IS=30A; VGS = 0 V 1.2 V trr Reverse Recovery Time TJ=25°C;IF=75A;di/dt = 100A/μs 28 nS Qrr Reverse Recovery Charge 50 nC |
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