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ISCN40D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza ISCN40D
Descripción Electrónicos  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN40D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
ISCN40D
DESCRIPTION
·
DC Current Gain -hFE = 30(Min)@ IC= 0.3A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·
DPAK for Surface Mount Applications
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for use in general purpose amplifier and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current
2
A
PC
Collector Power Dissipation
TC=25℃
25
W
Collector Power Dissipation
Ta=25℃
2.2
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
5
℃
/W


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