SM7311DHKP datasheet(2/11 Pages) SINOPWER

No. de pieza	SM7311DHKP

Descripción Electrónicos	Dual N-Channel Enhancement Mode MOSFET

PDF	11 Pages

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Fabricante Electrónico	SINOPWER [Sinopower Semiconductor Inc]

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SM7311DHKP

Rev. A.1 - November, 2018

www.sinopowersemi.com

Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

100

VGSS

Gate-Source Voltage

±20

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

Diode Continuous Forward Current

TC=25°C

Continuous Drain Current

TC=25°C

TC=100°C

16.4

IDM a

Pulse Drain Current

TC=25°C

100

Maximum Power Dissipation

TC=25°C

TC=100°C

RqJC

Thermal Resistance-Junction to Case

4.2

°C/W

Continuous Drain Current

TA=25°C

5.8

TA=70°C

4.6

Maximum Power Dissipation

TA=25°C

1.39

TA=70°C

0.89

RqJAc

Thermal Resistance-Junction to Ambient

Steady State

°C/W

IAS b

Avalanche Current, Single pulse

L=0.5mH

EAS b

Avalanche Energy, Single pulse

L=0.5mH

Note a：Pulse width is limited by max. junction temperature.

Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).

Note c：Surface Mounted on 1in2 pad area.

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