SM7312DHKP datasheet(3/11 Pages) SINOPWER

3 / 11 page

SM7312DHKP

Rev. A.1 - January, 2019

www.sinopowersemi.com

Electrical Characteristics (TA= 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

IDSS

Zero Gate Voltage Drain Current

VDS=32V, VGS=0V

TJ=85°C

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=250mA

1.4

1.8

2.5

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

RDS(ON) e Drain-Source On-state Resistance

VGS=10V, IDS=20A

5.4

6.8

TJ=125°C

8.9

VGS=4.5V, IDS=15A

9.5

Gfs

Forward Transconductance

VDS=5V, IDS=15A

Diode Characteristics

VSD e

Diode Forward Voltage

ISD=1A, VGS=0V

0.75

1.1

trr

Reverse Recovery Time

ISD=20A, dlSD/dt=100A/ms

Charge Time

Discharge Time

Qrr

Reverse Recovery Charge

Dynamic Characteristics f

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ciss

Input Capacitance

VGS=0V,

VDS=20V,

Frequency=1.0MHz

1370 1781

Coss

Output Capacitance

317

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

VDD=20V, RL=20W,

IDS=1A, VGEN=10V,

RG=6W

13.8

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics f

Total Gate Charge

VDS=20V, VGS=10V,

IDS=20A

Qgth

Threshold Gate Charge

2.6

Qgs

Gate-Source Charge

4.7

Qgd

Gate-Drain Charge

Note e：Pulse test ; pulse width≤300ms, duty cycle≤2%.

Note f：Guaranteed by design, not subject to production testing.

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