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ES1AF Datasheet(PDF) 1 Page - Guangdong Juxing Electronics Technology Co., Ltd. |
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ES1AF Datasheet(HTML) 1 Page - Guangdong Juxing Electronics Technology Co., Ltd. |
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1 / 3 page ![]() Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at T = 100 °C L Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C Typical Junction Capacitance at V =4V, f=1MHz R VRRM VRMS VDC IF(AV) IFSM VF IR Cj T , T j stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 0.8 25 1.1 5 50 9 35 -55 ~ +150 A A V μA ns °C Symbols Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Absolute Maximum Ratings and Characteristics Maximum Reverse Recovery Time trr pF Units 50 100 150 200 300 400 600 1.3 1.7 Typical Thermal Resistance RθJA 115 °C/W 2) 1 )Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A )P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas. 2 1) ES1AF S1BF S1CF S1DF S1EF S1GF S1JF Reverse Voltage – 50 to 600 V Forward Current –0.8 A PINNING PIN 1 2 DESCRIPTION Cathode Anode Simplified outline SMAF and symbol MECHANICAL DATA • • Terminals: Solderable per MIL-STD-750, Method 2026 • pprox. Weight: 27mg / 0.00095oz Case: SMAF A FEATURES For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives • 1 2 ES1AF THRU ES1JF Surface Mount Superfast Rectifiers E E E E E E http://www.trr-jx.com version: 02 |
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