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PRM040N10D Datasheet(PDF) 1 Page - PFC Device Inc.

No. de pieza PRM040N10D
Descripción Electrónicos  100V Single N-Channel MOSFET
PDF  8 Pages
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Fabricante Electrónico  PFC [PFC Device Inc.]
Página de inicio  http://www.pfc-device.com/eng/index.php
Logo PFC - PFC Device Inc.

PRM040N10D Datasheet(HTML) 1 Page - PFC Device Inc.

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100V Single N-Channel MOSFET
Dec-2018
Version 4.3
1 / 8
PFC Device Corporation
PRM040N10D
www.pfc-device.com
Major ratings and characteristics
Characteristics
Values
Units
VDS
100
V
ID (TC=25℃)
26.6
A
Max. RDS(ON)@VGS=10V
40
m
Max. RDS(ON)@VGS=4.5V
50
m
TJ Operating Junction
Temperature
-55 to +150
oC
General Description
The N-Channel enhancement mode power
field effect transistor is using trench DMOS
technology. This advanced technology has
been especially tailored to minimize
on-state resistance, provide superior
switching performance, and withstand high
energy pulse in the avalanche and
commutation mode. The device is well
suited for high efficiency fast switching
applications.
Typical Applications
 Charger Adapter
 Power Tools
 LED Lighting
Features
 Max. RDS(ON)=40mΩ@VGS=10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available
PRM040N10D
TO-252 (D-PAK)
S
G
D


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