WNM3003 datasheet(1/7 Pages) WILLSEMI

No. de pieza	WNM3003

Descripción Electrónicos	N-Channel, 30V, 4.0A, Power MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	WILLSEMI [Will Semiconductor Ltd.]

Página de inicio	http://www.willsemi.com/index.php?siteid=2

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1 / 7 page

WNM3003

N-Channel, 30V, 4.0A, Power MOSFET

Descriptions

The WNM3003 is N-Channel enhancement MOS

Field Effect Transistor. Uses advanced trench technology

and design to provide excellent RDS (ON) with low gate

charge. This device is suitable for use in DC-DC

conversion and power switch applications. Standard

Product WNM3003 is Pb-free.

Features

Trench Technology

Supper high density cell design

Excellent ON resistance for higher DC current

Extremely Low Threshold Voltage

Small package SOT-23

Applications

Driver for Relay, Solenoid, Motor, LED etc.

DC-DC converter circuit

Power Switch

Load Switch

Charging

Http://www.willsemi.com

SOT-23

Configuration (Top View)

WT3*

WT3

= Device Code

*

= Month (A~Z)

Marking

Order Information

Device

Package

Shipping

WNM3003-3/TR

SOT-23

3000/Tape&Reel

D

3

2

S

1

G

V(BR)DSS

Rds(on)

( )

0.033@ 10V

30V

0.043 @ 4.5V

Will Semiconductor Ltd.

1

2011 - Rev.1.1

Dec,

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WNM3003 Datasheet(PDF) 1 Page - Will Semiconductor Ltd.

WNM3003 Datasheet(HTML) 1 Page - Will Semiconductor Ltd.

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