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DAM18P60C Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM18P60C Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  P-Channel Enhancement Mode MOSFET Features VDSS = -60V RDS(ON) Typ.54mΩ @ VGS = -10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS -60 V Gate Source Voltage VGS ±25 V Drain Current Continuous @ Tc = 25°C ID -18 A @ Tc = 100°C -11 Drain Current Pulsed@ TC = 25°C IDM -72 A Single Pulse Avalanche Energy EAS 31 mJ Single Pulse Avalanche Current IAS -25 A Maximum Power Dissipation PD 42 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case R θJc 3 °C/W Aug.2017 DAM18P60C Note3 |
Número de pieza similar - DAM18P60C |
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