TO-263 datasheet(1/6 Pages) HSMC

No. de pieza	TO-263

Descripción Electrónicos	N-Channel Power Field Effect Transistor

PDF	6 Pages

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Fabricante Electrónico	HSMC [Hi-Sincerity Mocroelectronics]

Página de inicio	http://www.hsmc.com.tw

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1 / 6 page

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200402

Issued Date : 2004.04.01

Revised Date : 2005.03.10

Page No. : 1/6

H06N60U, H06N60E, H06N60F

HSMC Product Specification

H06N60 Series

N-Channel Power Field Effect Transistor

Description

This high voltage MOSFET uses an advanced termination scheme to

provide enhanced voltage-blocking capability without degratding

performance over time. In addition, this advanced MOSFET is designed to

withstand high energy in avalanche and commutation modes. The new

energy efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and saafety margin against unexpected voltage transients.

Features

• Robust High Voltage Termination

• Avalanc he Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast

Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and V

DS(on) Specified at Elevated Temperature

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

I

D

Drain to Current (Continuous)

6

A

I

DM

Drain to Current (Pulsed)

24

A

V

GS

Gate-to-Source Voltage (Continue)

±20

V

Total Power Dissipation (T

C=25

oC)

H06N60U (TO-263)

H06N60E (TO-220AB)

H06N60F (TO-220FP)

110

40

W

P

D

Derate above 25

OC

H06N60U (TO-263)

H06N60E (TO-220AB)

H06N60F (TO-220FP)

0.58

0.33

W/

°C

W/

°C

W/

oC

T

j

Operating Temperature Range

-55 to 150

OC

T

stg

Storage Temperature Range

-55 to 150

OC

E

AS

Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25

OC

(V

DD=100V, VGS=10V, IL=6A, L=10mH, RG=25Ω)

250

mJ

T

L

Maximum Lead Temperature for Soldering Purposes, 1/8”

from case for 10 seconds

260

°C

Note: 1. VDD=50V, ID=10A

2. Pulse Width and frequency is limited by Tj(max) and thermal response

H06N60 Series Pin Assignment

1

2

3

3-Lead Plastic TO-220FP

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

3-Lead Plastic TO-220AB

Package Code: E

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

3-Lead Plastic TO-263

Package Code: U

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

1

2

3

Tab

1

2

3

Tab

H06N60 Series

Symbol:

G

D

S

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