EMFA0P02JS datasheet(1/5 Pages) EXCELLIANCE

No. de pieza	EMFA0P02JS

Descripción Electrónicos	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Fabricante Electrónico	EXCELLIANCE [Excelliance MOS Corp.]

Página de inicio	http://www.excelliancemos.com/

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2015/7/15

p.1

EMFA0P02JS

G

S

D

P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS ‐20V

RDSON (MAX.)

100mΩ

ID ‐3.4A

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±12

V

Continuous Drain Current

TA = 25 °C

ID

‐3.4

A

TA = 70 °C ‐2.4

Pulsed Drain Current

1

IDM ‐14

Power Dissipation

TA = 25 °C

PD

1.04

W

TA = 70 °C

0.66

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Ambient

3

RJA (T ≤ 10sec)

83

°C / W

RJA (Steady State)

120

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

3The device mounted on a 1 in2 pad of 2 oz copper.

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EMFA0P02JS Datasheet(PDF) 1 Page - Excelliance MOS Corp.

EMFA0P02JS Datasheet(HTML) 1 Page - Excelliance MOS Corp.

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