HM2P10PR datasheet(2/3 Pages) HMSEMI

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Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V，IDS=-250µA

-100

Zero Gate Voltage Drain Current

IDSS

VGS=0V，VDS=-80V

-1

Gate-Body Leakage

IGSS

VGS=

±20V，VDS=0V

±100

ON Characteristics

Gate Threshold Voltage

VTH

VDS=VGS，IDS=-250µA

-1

-2.0

VGS=-10V，IDS=-2A

250-

Drain-Source On-State Resistance

RDS

VGS=-4.5V，IDS=-2A

300-

mΩ

Dynamic Characteristics

Input Capacitance

Ciss

890

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=-50V

VGS=0V

Freq.=1MHz

Switching Characteristics

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

VDS=-50V

VGS=-10V

RG=3Ω

Total Gate Charge at 10V

Gate to Source Gate Charge

Qgs

Gate to Drain “Miller” Charge

Qgd

VDS=-50V

VGS=-10V

IDS=-5A

Drain-Source Diode Characteristics

Drain-Source Diode Forward Voltage

VSD

VGS=0V，IS=-1A

-0.4

-1.0

Notes:

1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air.

HM2P10PR

Power MOSFET Datasheet

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