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HM722 Datasheet(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

No. de pieza HM722
Descripción Electrónicos  12MHz, High Slew Rate, RRIO CMOS Operational Amplifiers
PDF  13 Pages
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Fabricante Electrónico  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Página de inicio  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM722 Datasheet(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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Electrical Characteristics
3
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
INPUT CHARACTERISTICS
VOS
Input offset voltage
-4.2
±0.5
+4.2
mV
over Temperature
-4.5
+4.5
VOS TC
Offset voltage drift
over Temperature
2
μV/
℃
IB
Input bias current
1
pA
over Temperature
800
IOS
Input offset current
1pA
VCM
Common-mode voltage
range
VS––0.2
VS++0.2
V
CMRR
Common-mode rejection
ratio
VCM = 0.05V to 3.0V
80
94
dB
over Temperature
70
VCM = VS––0.1 to VS++0.1 V
60
75
over Temperature
55
AVOL
Open-loop voltage gain
RL = 10kΩ, VO = 0.05 to 3.5 V
98
108
dB
over Temperature
86
RL = 600Ω, VO = 0.15 to 3.5 V
82
92
over Temperature
72
RIN
Input resistance
100
GΩ
CIN
Input capacitance
Differential
2.0
pF
Common mode
3.5
OUTPUT CHARACTERISTICS
VOH
High output voltage swing
RL = 600Ω
VS+–100
mV
RL = 10kΩ
VS+–8
VOL
Low output voltage swing
RL = 600Ω
70
mV
RL = 10kΩ
6
ZOUT
Closed-loop output
impedance
f = 200kHz, G = +1
0.4
Ω
Open-loop output
impedance
f = 1MHz, IO = 0
2.6
ISC
Short-circuit current
Source current through 10Ω
55
mA
Sink current through 10Ω
50
DYNAMIC PERFORMANCE
GBW
Gain bandwidth product
f = 1kHz
12
MHz
ΦM
Phase margin
CL = 100pF
66
°
SR
Slew rate
G = +1, CL = 100pF, VO = 1.5V to 3.5V
11
V/μs
BWP
Full power bandwidth
<1% distortion
400
kHz
tS
Settling time
To 0.1%, G = +1, 2V step
0.26
μs
To 0.01%, G = +1, 2V step
0.28
VS =5.0V, TA =+25℃,VCM =VS /2, VO =VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40 to +125 ℃.
HM721, HM722, HM724
12MHz, High Slew Rate, RRIO CMOS Operational Amplifiers



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